Short CV/Education and training

  • 1991
    Abitur (A-levels)

  • 1991 – 1996
    Studied physics at the University of Erlangen-Nuremberg, Germany

  • 1993
    Vordiplom (intermediate examination)

  • 1993 – 1994
    Study abroad (one semester) at the Université des Sciences et Technologies de Lille (Lille 1), France

  • 1995 – 1996
    Diplom thesis

  • 1996
    Diplom degree in physics with a minor in computer science

  • 1997
    Fellowship in the Optoelectronics of Mesoscopic Semiconductors postgraduate programme

  • 1998 – 2000
    Research associate in the Theoretical Semiconductor Optics research group, Marburg University, Germany

  • 2000
    PhD from Marburg University

  • 2000 – 2002
    Postdoc at the Optical Sciences Centre, University of Arizona, Tucson, USA; Research on the optical properties of quantum dots, Feodor Lynen Fellowship from the Alexander von Humboldt Society

  • 2003 – 2007
    Research associate (tenure-track) in the Theoretical Semiconductor Optics research group, Marburg University

  • 2006
    Habilitation (postdoctoral qualification) in theoretical physics

  • 2008
    Heisenberg Fellowship from the German Research Foundation (DFG)

  • Since 2008
    Professor of theoretical physics at Chemnitz University of Technology, Germany

Selected publications

  • Imhof, S. et al.: Clustering effects in Ga(AsBi). In: Appl. Phys. Lett. 96, 131115, 04/2010.

  • Bückers, C. et al.: Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems. In: Physica Status Solidi B 247(4), 01/2010, S. 789-808.

  • Kühn, E. et al.: Microscopic simulation of nonequilibrium features in quantum-well pumped semiconductor disk lasers. In: Appl. Phys. Lett. 96, 051116, 2010.

  • Kühn, E. et al.: Moloney Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers. In: Journal of Applied Physics 15, 063105, 2009.

  • Bückers, C. et al.: Microscopic calculation and measurement of the laser gain in a GaInSb quantum well structure. In: Appl. Phys. Lett. 92, 071107, 2008.

  • Kühn, E. et al.: Influence of chirp on the femtosecond excitation of a semiconductor microcavity laser. In: Appl. Phys. Lett. 92, 011107, 2008.

  • Schlichenmaier, C. et al.: Gain and carrier losses of (GaIn)(NAs) heterostructures in the 1300–1500 nm range. In: Appl. Phys. Lett. 87, 261109, 2005.

  • Thränhardt, A. et al.: Nitrogen incorporation effects on gain properties in GaInNAs lasers – experiment and theory. In: Appl. Phys. Lett. 86, 201117, 2005.

  • Schlichenmaier, C. et al.: Type I-type II transition in InGaAs/GaNAs heterostructures. In: Appl. Phys. Lett. 86, 081903, 2005.

  • Thränhardt, A. et al.: Nonequilibrium gain in optically pumped GaInNAs laser structures. In: Appl. Phys. Lett. 85, 5526, 2004.

  • Guest, J.R. et al.: Direct observation of optical obsorption by single quantum dot excitons. In: Phys. Rev. B 65, R241310, 2002.

Selected projects

  • Collaboration with Osram Opto Semiconductors within the framework of the German Federal Ministry of Education and Research (BMBF) MOLAS project, since 2008

  • Project leader, Research Unit 483 "Metastable Compound", 2005 – 2007

  • Semiconductor systems and heterostructures, collaboration with Osram Opto Semiconductors within the framework of the BMBF VISULAS project, 2003 – 2007


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