Short CV/Education and training

  • 1990
    Abitur (A-levels)

  • 1990 – 1996
    Studied physics at the University of Augsburg, Germany

  • 1996
    Diplom degree in physics; thesis: Ion-beam modification of Si/SiC/Si layer systems

  • 1997 – 1999
    Research assistant at the Institute of Physics, University of Augsburg

  • 1999
    Doctor of Natural Sciences (Dr. rer. nat.)

  • 1999 – 2001
    Research associate at the WZMW (Scientific Centre for Material Sciences), Marburg University, Germany

  • 1997 – 2000
    Several research visits to the Osaka National Research Institute, Osaka, Japan

  • 2002
    Visiting researcher at Stanford University, USA

  • 2003 – 2008
    Leader of a German Research Foundation (DFG) junior research group within the framework of Research Unit 483 at the WZMW, Marburg University

  • 2006
    Habilitation (postdoctoral qualification) in experimental physics, Marburg University

  • Since 2007
    Project director of the (DFG) European graduate programme "Electron–electron interactions in solids"

  • 2008 – 2009
    Visiting professor, Institute of Physics, Humboldt University of Berlin, Germany (winter semester)

  • Since 2009
    Heisenberg W2 Professor, Marburg University

  • Since 2009
    Member of the board of directors, Graduate Centre for Life and Natural Sciences, Marburg University

  • Since 2009
    Member of the board of directors, Centre for Material Science, Marburg University

  • Since 2010
    Heisenberg Professor (W3), Marburg University

Selected publications

  • K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz: MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors. In: J. Cryst. Growth 311(8) (2009), 2418

  • O. Rubel, I. Nemeth, W. Stolz, K. Volz: Modelling the compositional dependence of electron diffraction in GaAs- and GaP-based compound semiconductors. In: Phys. Rev. B 78, 075207 (2008)

  • K. Volz, W. Stolz, J. Teubert, P.J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, A.W. Bett: Doping, electrical properties and solar cell application of GaInNAs. In: 'Dilute III/V Nitride Semiconductors and Material Systems'. Ed. A. Erol, Springer Berlin, Heidelberg (2008), 369 – 404

  • B. Kunert, K. Volz, J. Koch, W. Stolz: Direct Band-Gap Ga(NAsP)-Material System pseudomorphically

    grown on GaP-Substrate. In: Appl. Phys. Lett 88 (2006) 182108

Selected projects

  • German Research Foundation (DFG) research grant: Structure formation processes and phase transitions in metastable mixed III/V semiconductors and heterostructures

  • German Federal Ministry of Education and Research (BMBF) joint project "Highly Efficient Solar Cells on a Si-Substrate"

  • Heisenberg Professor of Structural Analysis (DFG)

  • Influence of elements with small, covalent radii on the nanostructure of III/V semiconductors (DFG research grant)

  • Scanning transmission electron microscope (DFG large devices)

  • Bismide and nitride components for high temperature operation (EU – STReP)

Membership in scientific bodies/juries

  • German Physical Society

  • German Society for Electron Microscopy

  • European Microscopic Society


You can only see the contact information of the academics in the database if you are a registered user of AcademiaNet.
Please register here


  1. Read what our members say about AcademiaNet.

No more excuses!

  1. Please download the brochure "No more excuses" and read more about female experts in Europe, and about AcademiaNet.

Similar profiles

  1. Dr. Chantal Abergel

    Biological and related sciences , Physical sciencesEnvironmental virology, Molecular and structural biology, biochemistry

  2. Prof. Dr. Conny Aerts

    Physical sciencesAsteroseismology

  3. Prof. Dr. Seema Agarwal

    Physical sciencesPreparative and physical chemistry of polymersNanotechnology

  4. Dr. Fatemeh Ajalloueian

    Physical sciencesBiopolymers, Fiber science



  1. New material transforms near-infrared into visible light

    Researchers at the University of Marburg in Germany have created a new kind of material that is able to convert a near-infrared laser beam into white light. Prof. Stefanie Dehnen, Prof. Kerstin Volz, and Dr. Sangam Chatterjee were part of this team.