Short CV/Education and training

  • 1990
    Abitur (A-levels)

  • 1990 – 1996
    Studied physics at the University of Augsburg, Germany

  • 1996
    Diplom degree in physics; thesis: Ion-beam modification of Si/SiC/Si layer systems

  • 1997 – 1999
    Research assistant at the Institute of Physics, University of Augsburg

  • 1999
    Doctor of Natural Sciences (Dr. rer. nat.)

  • 1999 – 2001
    Research associate at the WZMW (Scientific Centre for Material Sciences), Marburg University, Germany

  • 1997 – 2000
    Several research visits to the Osaka National Research Institute, Osaka, Japan

  • 2002
    Visiting researcher at Stanford University, USA

  • 2003 – 2008
    Leader of a German Research Foundation (DFG) junior research group within the framework of Research Unit 483 at the WZMW, Marburg University

  • 2006
    Habilitation (postdoctoral qualification) in experimental physics, Marburg University

  • Since 2007
    Project director of the (DFG) European graduate programme "Electron–electron interactions in solids"

  • 2008 – 2009
    Visiting professor, Institute of Physics, Humboldt University of Berlin, Germany (winter semester)

  • Since 2009
    Heisenberg W2 Professor, Marburg University

  • Since 2009
    Member of the board of directors, Graduate Centre for Life and Natural Sciences, Marburg University

  • Since 2009
    Member of the board of directors, Centre for Material Science, Marburg University

  • Since 2010
    Heisenberg Professor (W3), Marburg University

Selected publications

  • K. Volz, J. Koch, F. Höhnsdorf, B. Kunert, W. Stolz: MOVPE growth of dilute nitride III/V semiconductors using all liquid metalorganic precursors. In: J. Cryst. Growth 311(8) (2009), 2418

  • O. Rubel, I. Nemeth, W. Stolz, K. Volz: Modelling the compositional dependence of electron diffraction in GaAs- and GaP-based compound semiconductors. In: Phys. Rev. B 78, 075207 (2008)

  • K. Volz, W. Stolz, J. Teubert, P.J. Klar, W. Heimbrodt, F. Dimroth, C. Baur, A.W. Bett: Doping, electrical properties and solar cell application of GaInNAs. In: 'Dilute III/V Nitride Semiconductors and Material Systems'. Ed. A. Erol, Springer Berlin, Heidelberg (2008), 369 – 404

  • B. Kunert, K. Volz, J. Koch, W. Stolz: Direct Band-Gap Ga(NAsP)-Material System pseudomorphically

    grown on GaP-Substrate. In: Appl. Phys. Lett 88 (2006) 182108


Selected projects

  • German Research Foundation (DFG) research grant: Structure formation processes and phase transitions in metastable mixed III/V semiconductors and heterostructures

  • German Federal Ministry of Education and Research (BMBF) joint project "Highly Efficient Solar Cells on a Si-Substrate"

  • Heisenberg Professor of Structural Analysis (DFG)

  • Influence of elements with small, covalent radii on the nanostructure of III/V semiconductors (DFG research grant)

  • Scanning transmission electron microscope (DFG large devices)

  • Bismide and nitride components for high temperature operation (EU – STReP)

Membership in scientific bodies/juries

  • German Physical Society

  • German Society for Electron Microscopy

  • European Microscopic Society

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News

  1. New material transforms near-infrared into visible light

    Researchers at the University of Marburg in Germany have created a new kind of material that is able to convert a near-infrared laser beam into white light. Prof. Stefanie Dehnen, Prof. Kerstin Volz, and Dr. Sangam Chatterjee were part of this team.