Prof. Dr. Barbara Albert
Physical sciences, Inorganic solid state and materials chemistry
Assoc. Prof. Vanya Darakchieva
Nominated by
- Swedish Research Council
- AcademiaNet member since 12.03.2018
- AcademiaNet- Selection Criteria
Employed by
- Linköping University
Academic Discipline/Fields
- Natural sciences, mathematics and statistics
Field
Physical sciences
Area of specialisation
Material Physics: semiconductor and nanoscale materials
Research interests
I am working on the development of novel semiconductor and nanoscale materials, and spectroscopic metrology for ultra-fast electronics and optoelectronics that will greatly improve computation and communication capabilities. A major goal is to produce significant progress in understanding of epitaxial graphene properties towards device-grade epitaxial graphene for implementation in high-speed electronics and THz-frequency large scale processor technologies.
To achieve this I apply unique ellipsometry techniques to study, understand and optimize the transport, electronic and structural properties of epitaxial graphene grown on SiC by sublimation.
Further current efforts are concentrated on understanding the mechanisms that generate and control the transport properties in epitaxial layers of group-III nitrides (InN, InAlN, AlGaN) for high-power electronic applications and novel solid state lighting.
I have built a THz spectroscopic ellipsometer, which is the core of an unique THz and magneto-ellipsometry center at Linköping University. The unprecedented capabilities of this new instrumentation are the gathering meaningful information about electronic and spin transport with no physical contacts that can result in surface damage or sample contamination. The technology is the first of its kind in Europe and could transform research into advanced semiconductor-, nano-, and bio-materials.
Distinctions and Awards
Consolidator Grant Award by Swedish Research Council (awards 20 in all disciplines of medical, natural, and social sciences), 2017
Infrastructure Fellow, by the Swedish Foundation for Strategic Research, 2016
Future Research Leaders Award SSF – FFL5, by the Swedish Foundation for Strategic Research, 2014
Young Researcher Award, by the Swedish Research Council, 2014
Paul Drude Award – given to a young scientist for exceptional contributions to the development and application of spectroscopic ellipsometry, 2013
VINNMER fellow to University of Nebraska-Lincoln and J. -A. Woollam -Co. USA, International Qualification Marie Curie Fellowship, Swedish Governmental Agency for Innovation Systems – VINNOVA and ERC,
2012
Young Research Assistant Award by the Swedish Research Council for junior research position, 2006
Interested in
- Lectures, Management position, Membership in scientific bodies, Professorship, Refereeing
- reading, poetry, travel, photography
Languages
Bulgarian, English, French, Swedish
Doctorate
- 2004: Strain-related structural and vibrational properties of group-III nitride layers and superlattices
PostDoc qualification, e.g. Habilitation
- 2009: Docent in Semiconductor Physics
Short CV/Education and training
- Since 2012Associate Professor; IFM & Didacticum, Linköping University, Sweden
- Since 2016Adjunct Professor; Department of Engineering, University of Nebraska-Lincoln, USA
- 2012 – 2016Visiting Professor; Dep. of Engineering, University of Nebraska-Lincoln, USA
- 2008 – 2010Senior Researcher; Instituto Tecnológico e Nuclear (ITN), Sacavém, Portugal
- 2006 – 2011Assistant Professor; IFM, Linköping University, Sweden
- 2000 – 2004PhD student; IFM, Linköping University, Sweden
- 1997 – 2000Research Associate, Faculty of Physics, Sofia University, Bulgaria
Selected publications
S. Knight, T. Hofmann, C. Bouhafs, N. Armakavicius, P. Kühne, V. Stanishev, I.G. Ivanov, R. Yakimova, S. Wimer, M. Schubert, and V. Darakchieva, “In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene“, Scientific Reports 7, 5151 (2017)
C. Bouhafs, A.A. Zakharov, I.G. Ivanov, F. Giannazzo, J. Eriksson, V. Stanishev, P. Kühne, T. Iakimov, T. Hofmann, M. Schubert, F. Roccaforte, R. Yakimova, and V. Darakchieva, “Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC“, Carbon 116, 722 (2017)
M. Schubert, R. Korlacki, S. Knight, T. Hofmann, S. Schöche, V. Darakchieva, E. Janzén, B. Monemar, D. Gogova, Q. -T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, K. Goto, A. Kuramata, S. Yamakoshi, and M. Higashiwaki, “Anisotropy, phonon modes, and free charge carrier parameters in monoclinic beta-gallium oxide single crystals“, Phys. Rev. B. 93, 125209 (2016)
S. Khromov, P. O. Å. Persson, J. Wang, A. Yoshikawa, J. Rosén, E. Janzén and V. Darakchieva, “Correlation between switching to n-type conductivity and structural defects in highly Mg-doped InN“, Appl. Phys. Lett. 106, 232102 (2015)
M.-Y. Xie, M. Schubert, J. Lu, P. O. Å. Persson, V. Stanishev, C. L. Hsiao, L. C. Chen, W. J. Schaff, and V. Darakchieva, “Assessing structural, free-charge carrier, and phonon properties of mixed-phase epitaxial films: The case of InN”, Phys. Rev. B 90, 195306 (2014)
P. Khüne, V. Darakchieva, R. Yakimova, J. D. Tadesco, R.L. Myers-Ward, C.R. Eddy, K. Gaskill, C. M. Herzinger, M. Schubert, and T. Hofmann, "Polarization Selection Rules for Inter-Landau-Level Transitions in Epitaxial Graphene Revealed by the Infrared Optical Hall Effect", Phys. Rev. Lett. 111, 077402 (2013)
T. Hofmann, P. Khüne, S, Schöche, Jr-Tai Chen, U. Forsberg, E. Janzén, N. Ben Sedrine, C. M. Herzinger, J. A. Woollam, M. Schubert, and V. Darakchieva, "Temperature dependent effective mass in AlGaN/GaN high mobility transistor structures", Appl. Phys. Lett. 101, 192102 (2012)
M.-Y. Xie, F. Tasnádi, I. A. Abrikosov, L. Hultman and V. Darakchieva, "Elastic constants, composition and piezoelectric polarization of InAlN: from ab initio structural calculations to experimental implications for the validity of Vegard's rule", Phys. Rev. B 86, 155310 (2012)
V. Darakchieva, T. Hofmann, M. Schubert, B. E. Sernelius, B. Monemar, P.Å.O. Persson, F. Giuliani, E. Alves, H. Lu and W. J. Schaff, "Free electron behavior in InN: on the role of dislocations and surface electron accumulation", Appl. Phys. Lett. 94, 022109 (2009)
V. Darakchieva, T. Paskova, M. Schubert, H. Arwin, P. P. Paskov, B. Monemar, D. Hommel, J. Off, F. Scholz, M. Heuken, B. A. Haskell, P. T. Fini, S. J. Speck, S. Nakamura, "Anisotropic strain and phonon deformation potentials in GaN", Phys. Rev. B 75, 195217 (2007)
Complete list of publications
Selected projects
Consolidator grant by the Swedish Research Council
Infrastructure Fellow Award from the Swedish Foundation for Strategic Research
Future Research Leaders award from the Swedish Foundation for Strategic Research
Membership in scientific bodies/juries
Evaluation panels at the Swedish Research Council, VR
Chair of Applied Physics NT15 panel, 2018
Vice-chair of Applied Physics NT15 panel, 2017
Member of Applied Physics NT15 panel, 2014 – 2016
Member of Technical Physics NT15 panel, 2011 – 2012
Review Editor of Frontiers: Condensed Matter – 2013 – present.
Reviewer for more than 15 peer-review journals: PRB, APL, JAP, RSI, Small, etc.
Board member, SweGaN AB, Since 2017
Additional qualifications
PhD thesis opponent/reviewer
Faculty opponent (1) and member of PhD evaluation committees in Sweden (10).
Soft Skills/Other activities and achievements
Other activities and achievements/family
married, two children
Contact
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