Short CV/Education and training

  • 1975
    John Brinckman Gymnasium (grammar school) Güstrow, Germany: Abitur (A-levels)

  • 1975 – 1980
    Studied crystallography at the University of Leipzig, Germany

  • 1979
    Degree in English/German technical translation, specialising in chemistry, University of Leipzig

  • 1980
    Diplom degree in crystallography from the University of Leipzig

  • 1980 – 1984
    Research assistant, University of Leipzig

  • 1984
    Doctor of natural science (Dr rer. nat.) from the University of Leipzig

  • 1984 – 2002
    Research associate, IHP Frankfurt (Oder), Germany

  • 2001
    Vordiplom (intermediate examination) in the business-economics supplementary course for natural scientists and engineers at FernUniversität in Hagen – University of Hagen, Germany

  • 2002 – 2004
    Communicant Semiconductor Technologies AG

  • Since 2004
    Research associate at IHP Frankfurt (Oder)

Selected publications

  • Kissinger, G. et al.: Modeling the Early Stages of Oxygen Agglomeration. In: J. Electrochem. Soc. 158, 2011. H343.

  • Akhmetov, V., Kissinger, G., von Ammon, W.: Interaction of Oxygen with Thermally Induced Vacancies in Czochralski Silicon. In: Appl. Phys. Lett. 94, 2009. p. 092105.

  • Kissinger, G., Dabrowski, J.: Oxide Precipitation via Coherent Seed-Oxide Phases. In: J. Electrochem. Soc. 155, 2008. H448.

  • Fischer, A., Kissinger, G.: Load Induced Stresses and Plastic Deformation in 450 mm Silicon Wafers. In: Appl. Phys. Lett. 91, 2007. p. 111911.

  • Kissinger, G. et al.: Analytical Modeling of the Interaction of Vacancies and Oxygen for Oxide Precipitation in RTA Treated Silicon Wafers. In: J. Electrochem. Soc. 154, 2007. H454.

  • Kissinger, G. et al.: A Contribution to Oxide Precipitate Nucleation in Nitrogen Doped Silicon. In: Phys. Stat. Sol. (a) 203, 2006. p. 677.

  • Kissinger, G. et al.: Investigation of Ostwald Ripening in Nitrogen Doped Czochralski Silicon. In: Appl. Phys. Lett. 87, 2005. p. 101904.

  • Kissinger, G. et al.: Grown-In Oxide Precipitate Nuclei in Czochralski Silicon Substrates and their Role in Device Processing. In: J. Electrochem. Soc. 146, 1999. p. 1971.

  • Kissinger, G. et al.: Influence of Residual Point Defect Supersaturation on the Formation of Grown-In Oxide Precipitate Nuclei in Cz-Si. In: J. Electrochem. Soc. 145, 1998. L75.

  • Kissinger, G. et al.: Conditions for the Formation of Ring-Like Distributed Stacking Faults in CZ-Si Wafers. In: Jpn. J. Appl. Phys. Part 2, (Letters) 37, 1998. L306.

  • Kissinger, G. et al.: Internal Oxidation of Vacancy Agglomerates in Czochralski Silicon Wafers During High Temperature Anneals. In: Appl. Phys. Lett. 72, 1998. p. 223.

  • Kissinger, G. et al.: Key Influence of the Thermal History on Process-Induced Defects in Czochralski Silicon Wafers, Semicond. In: Sci. Technol. 12, 1997. p. 933.

  • Kissinger, G.: A Method for Studying the Grown-In Defect Density Spectra in Czochralski Silicon Wafers. In: J. Electrochem. Soc. 144, 1997. p. 1447.

  • Kissinger, G.: Observation of Stacking Faults and Prismatic Punching Systems in Silicon by Light Scattering Tomography. In: J. Cryst. Growth 158, 1996. p. 191.

  • Kissinger, G.: Stepwise Equilibrated Graded GeXSi1-X Buffer with Very Low Threading Dislocation Density on Si (001). In: Appl. Phys. Lett. 66, 1995. p. 2083.

  • Kissinger, G., Morgenstern, G., Richter, H.: The Gettering Efficiency of a Direct Bonded Interface. In: J. Appl. Phys. 74, 1993. p. 6576.

  • Kissinger, G., Kissinger, W.: Void-Free Silicon-Wafer-Bond Strengthening in the 200-400 °C Range. In: Sensors and Actuators A36, 1993. p. 149.

Selected projects

  • Future Silicon Wafers (industry project), since 2004

  • 300mm of Silicon (industry project), 1997 – 1999

  • Gettering and defect engineering in high-voltage substrates (industry project), 1987 – 1989

  • Creation of a pilot line for InP wafers (industry project), 1984 – 1985

Membership in scientific bodies/juries

  • Elected member of the scientific council of IHP during the German reunification phase and reorganisation of the research institutes in East Germany, 1990 – 1991

Additional qualifications

Chairperson and co-organiser of the following symposia:

  • Advanced Silicon Materials Research for Electronic and Photovoltaic Applications III (E-MRS), 2012

  • Advanced Silicon Materials Research for Electronic and Photovoltaic Applications II (E-MRS), 2010

  • Advanced Silicon Materials Research for Electronic and Photovoltaic Applications (E-MRS), 2008

  • Advanced Silicon for the 21st Century (E-MRS), 2006

  • In-line characterisation, yield, reliability, and failure analysis in microelectronic manufacturing II (SPIE), 2001

  • In-line characterisation, yield, reliability, and failure analysis in microelectronic manufacturing (SPIE), 1999

Soft Skills/Other activities and achievements

Other activities and achievements/family

  • 2 children


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